Quenched-in carbon (Q-carbon) is a recently discovered carbon allotrope featuring a dense, non-equilibrium network of predominantly sp3-bonded carbon [1]. Distinct from crystalline diamond, Q-carbon offers superior mechanical robustness and enhanced packing density. Its structural compatibility with diamond makes it an ideal seed for diamond nucleation, providing a cost-effective solution for growing large-area diamond films.

In this talk, I will present the synthesis of pristine Q-carbon films using a non-equilibrium plasma-enhanced chemical vapor deposition (PECVD) process, optimized through controlled low-energy Ar ion bombardment. I will discuss the underlying formation mechanism and demonstrate wafer-scale integration of high-quality Q-carbon films on substrates up to 12ʺ, highlighting its compatibility with semiconductor manufacturing [2]. By acting as a template, Q-carbon facilitates the rapid, adherent growth of continuous diamond films, effectively overcoming traditional deposition bottlenecks. Furthermore, I will demonstrate intrinsic and robust room-temperature ferromagnetism in undoped Q-carbon with an exceptionally high Curie temperature (~550 K) for carbon-based systems [3]. Finally, Q-carbon is shown to exhibit enhanced antimicrobial performance compared to conventional diamond-like carbon coatings, driven solely by its unique structure and low surface roughness [4]. These results establish Q-carbon as a multifunctional
material platform with potential applications spanning next-generation electronic devices, protective coatings, and biomedical surfaces.